High-Isolation W-band InP-based PIN Diode Monolithic Integrated Switches
نویسندگان
چکیده
This paper demonstrates the design of high-isolation millimeter-wave monolithic integrated switches using MOCVD-grown InGaAs/InP PIN diodes as switching devices. W-band single-pole single-throw switch using double shunt diode topology allowed significant improvement of isolation while keeping insertion loss low. The SPST switch used two InGaAs PIN diodes and demonstrated better than 35dB isolation and 1.8dB insertion loss at 92GHz. A comparative analysis of single and double diode switch characteristics is treated together with the design and fabrication details. The power handling capability of the switches is also discussed.
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